Asymmetrically regulated outputs for IGBT, Si, SiC and GaN cascode gate drives - With the new R24C2T25 DC/DC converter, it is now easier than ever to generate current for IGBT, Si, SiC and GaN cascode gate drivers. The SMT device in a compact 7.5 x 12.83mm 36-pin SSOP package offers two asymmetrical output voltages that are programmable via external resistor networks.

One output can be set between +2.5 and +22.5VDC and the other between -2.5 and -22.5VDC, with a total positive to negative voltage of 18 to 25VDC, for example +15/-3V, to drive SiC gates efficiently. Voltages are kept within +/-1.5% to avoid the risk of overvoltage and damage. The total power available is 2W up to an ambient temperature of 82°C and 2.5W up to 75°C. A useful power reduction is also available up to a maximum enclosure temperature of 125°C.
The isolation of the R24C2T25 is 3kVAC/1min with an extremely low coupling capacitance of 3.5pF and a common mode transient withstand of +/-150V/ns. This makes the components ideal for supplying high-side gate drives with fast dV/dt and dI/dt switching edge rates.
The RECOM R24C2T25 has a soft start, an input under- and overvoltage lockout, a thermal shutdown and output overload protection. An overvoltage and undervoltage block at the output ensures that power components cannot be loaded by invalid gate voltages. A power good signal and ON/OFF control put the device into standby mode with less than 700µA current consumption.
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R24C2T25-R
2W DC/DC Converter, Programmable Asymmetrical Outputs for IGBT/Si/SiC/Cascode GaN T&RCHF 4.20Available to order -
R24C2T25-CT
2W DC/DC Converter, Programmable Asymmetrical Outputs for IGBT/Si/SiC/Cascode GaNCHF 6.15Available to order